Analog Devices Delivers Breakthrough Radio Frequency Circuits for 4G Cellular Base stations

September 26, 2009 | Analog Devices, Inc (NYSE: ADI), a global leader in high-performance semiconductors for signal-processing applications and RF integrated circuits, today introduced a series of hig

September 26, 2009 | Analog Devices, Inc (NYSE: ADI), a global leader in high-performance semiconductors for signal-processing applications and RF integrated circuits, today introduced a series of highly integrated RFICs (radio frequency integrated circuits) designed for LTE (long term evolution) and 4th generation (4G) cellular base stations. LTE is a set of enhancements to the UMTS (universal mobile telecommunications system) standard and is considered to be the last step toward the 4th generation of radio technologies in cellular networks. As worldwide mobile carriers evolve toward 4G technologies, small higher-density radio card form factors are needed to support the delivery of continuous voice and high-data-rate services. ADI’s new ADRF660x series of mixers and ADRF670x series of modulators enable these high-density radio cards by combining multiple discrete functional blocks into a single device, while meeting the demanding performance required by higher-capacity base stations. With this breakthrough level of integration, base station manufacturers can realize an unprecedented 60 percent reduction in board space and a significant savings on bill of materials costs.

“Today’s 3G and LTE base stations use many standard discrete RF components to optimize performance across both the transmit and receive RF signal paths. ADI’s new ADRF660x and ADRF670x products combine the radio frequency conversion functional blocks into one integrated circuit, without any sacrifice in performance,” said Peter Real, vice president, Linear and RF products, Analog Devices. “These new devices are based on ADI’s PLL/VCO synthesizer, mixer and modulator technologies, which offer the industry’s leading phase noise performance, power consumption and linearity for smaller form factor and higher density macro, micro, and picocell base stations.”

About the ADRF660x and ADRF670x Series

The new ADRF660x and ADRF670x series each debut with four pin-compatible devices that cover the commonly used cellular 2G, 3G and LTE frequency bands and ease system design through integration allowing for a common footprint PCB (printed circuit board) design for all cellular frequency bands and air interface standards.

The four ADRF670x products integrate a high dynamic range analog I/Q modulator, RF output switch and PLL (phase locked loop) with integrated VCO (voltage controlled oscillator) in one compact RFIC . The modulator input bandwidth of 500 MHz is capable of supporting either a specified band or complex IF up-conversion transmit signal paths. In addition, the modulator output supports a linear high output power level for wideband multi-carrier LTE applications.

The four ADRF660x products integrate a high-linearity active RF mixer; RF input balun for single- ended 50 Ω input; and a PLL synthesizer with integrated VCO in one compact RF circuit. The active mixer provides a voltage conversion gain of 6 dB, alleviating the need for additional IF amplification over competing passive mixers. The differential IF output is capable of supporting highest IF frequencies up to 500 MHz. The ADRF660x series can be used for receiver path down-conversion and transmit path observation receiver applications.

All eight devices share a common SPI control interface and are software compatible. The integrated PLL is a multi-modulus Fractional-N synthesizer designed to support LTE’s 100 KHz channel raster and offers the industry’s lowest in-band phase noise. For added flexibility all devices provide a buffered local oscillator (LO) output and allow the use of an external VCO. More information and complete data sheets are available at

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